| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING APPARATUS |
| 摘要 |
Provided is a method of manufacturing a semiconductor device. The method includes (a) loading a substrate into a processing chamber; (b) starting a supply of a first processing gas into the processing chamber; (c) starting a supply of a second processing gas into the processing chamber during the supply of the first processing gas; (d) stopping the supply of the second processing gas during the supply of the first processing gas; (e) stopping the supply of the first processing gas after performing the step (d); (f) removing the first processing gas and the second processing gas remaining after performing the step (e) from the processing chamber; and (g) unloading the substrate from the processing chamber. |
| 申请公布号 |
US2014162454(A1) |
申请公布日期 |
2014.06.12 |
| 申请号 |
US201414183301 |
申请日期 |
2014.02.18 |
| 申请人 |
Hitachi Kokusai Electric Inc. |
发明人 |
KAGA Yukinao;SAITO Tatsuyuki;SAKAI Masanori;YOKOGAWA Takashi |
| 分类号 |
H01L21/3205 |
主分类号 |
H01L21/3205 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A method of manufacturing a semiconductor device, comprising:
(a) loading a substrate into a processing chamber; (b) starting a supply of a first processing gas into the processing chamber; (c) starting a supply of a second processing gas into the processing chamber during the supply of the first processing gas; (d) stopping the supply of the second processing gas during the supply of the first processing gas; (e) stopping the supply of the first processing gas after performing the step (d); (f) removing the first processing gas and the second processing gas remaining after performing the step (e) from the processing chamber; and (g) unloading the substrate from the processing chamber.
|
| 地址 |
Tokyo JP |
