发明名称 ELASTIC WAVE DEVICE
摘要 A reflector of the elastic wave resonator in an elastic wave device has first and second regions. The second region has third and fourth regions. The first region is located near to the IDTs of the reflector, while the second region is located farther from them. The third region is located nearer to the IDTs in the second region, while the fourth region is located farther from them. As a result that the center frequency of the reflection band in the fourth region is lower than that in the third region, an elastic wave device with low energy loss and insertion loss is provided.
申请公布号 US2014159833(A1) 申请公布日期 2014.06.12
申请号 US201314130653 申请日期 2013.03.11
申请人 PANASONIC CORPORATION 发明人 Ikeuchi Satoru;Hatakenaka Seiichi
分类号 H03H9/64 主分类号 H03H9/64
代理机构 代理人
主权项 1. An elastic wave device comprising: a piezoelectric substrate; a low-frequency filter formed on the piezoelectric substrate, and having a low-frequency passband; a high-frequency filter formed on the piezoelectric substrate, and having a high-frequency passband higher than the low-frequency passband; and a terminal connected to the low-frequency filter and the high-frequency filter,wherein the low-frequency filter has a first elastic wave resonator connected to the terminal,wherein the first elastic wave resonator has a plurality of interdigital transducers disposed between a pair of reflectors,wherein at least one of the pair of reflectors has a first region and a second region, and the second region has a third region and a fourth region,wherein the first region is located nearer to the interdigital transducers of the reflectors, while the second region is located farther from the interdigital transducers of the reflectors,wherein the third region is located nearer to the interdigital transducers in the second region, while the fourth region is located farther from the interdigital transducers in the second region,wherein a reflection band in the first region covers the low-frequency passband,wherein a reflection band in the second region covers the high-frequency passband, andwherein a center frequency of the reflection band in the fourth region is lower than a center frequency of the reflection band of the third region.
地址 Osaka JP