Semiconductor substrate e.g. silicon substrate of subsystem, is connected with another semiconductor substrate, so as to encapsulate passive or active device between two substrates in cavity hermetically

摘要

The semiconductor substrate (1) has a reactive multi-layer (7) that react exothermically with two alternating nano-layers. The case materials of two nano-layers are different. The reactive multi-layers are thermally contacted with each other. The gas-absorptive state convertible surface area (6) is provided in the bonding layer (3). The substrate is connected with another semiconductor substrate (2), so as to encapsulate passive or active device (4) between two substrates in a cavity hermetically. The convertible surface area is located at a future cavity inner surface. Independent claims are included for the following: (1) system for connecting two substrates; (2) subsystem; and (3) method for hermetically encapsulating passively or active device between two substrates.