发明名称 |
APPARATUS FOR ESD PROTECTION |
摘要 |
The present invention relates to an apparatus for ESD protection. The apparatus for ESD protection according to an embodiment of the present invention includes an N+ region which is formed on a substrate; a P+ region which is formed on the substrate; a first epitaxial growth block region which is formed between the N+ region and the P+ region. According to an embodiment of the present invention, the first epitaxial growth block region includes silicon nitride. |
申请公布号 |
KR20140071851(A) |
申请公布日期 |
2014.06.12 |
申请号 |
KR20130015730 |
申请日期 |
2013.02.14 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN WUN JIE;CHEN BO TING;TSENG JEN CHOU;SONG MING HSIANG |
分类号 |
H01L27/04 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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