发明名称 APPARATUS FOR ESD PROTECTION
摘要 The present invention relates to an apparatus for ESD protection. The apparatus for ESD protection according to an embodiment of the present invention includes an N+ region which is formed on a substrate; a P+ region which is formed on the substrate; a first epitaxial growth block region which is formed between the N+ region and the P+ region. According to an embodiment of the present invention, the first epitaxial growth block region includes silicon nitride.
申请公布号 KR20140071851(A) 申请公布日期 2014.06.12
申请号 KR20130015730 申请日期 2013.02.14
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 LIN WUN JIE;CHEN BO TING;TSENG JEN CHOU;SONG MING HSIANG
分类号 H01L27/04 主分类号 H01L27/04
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