RESIST COMPOSITION FOR EUV, METHOD OF PRODUCING RESIST COMPOSITION FOR EUV, AND METHOD OF FORMING RESIST PATTERN

摘要

A resist composition for EUV exhibiting E0KrF greater than E0EUV, in which E0KrF is a sensitivity to KrF light of 248 nm, and E0EUV is a sensitivity to EUV light, and a method of producing a resist composition for EUV including preparing the resist composition so that E0KrF is greater than E0EUV, and a method of forming a resist pattern, including applying the resist composition for EUV to a substrate to form a resist film on the substrate; conducting EUV exposure of the resist film; and developing the resist film to form a resist pattern. The resulting resist composition for EUV exhibits excellent lithography properties and pattern shape in EUV lithograph.

主权项

1. A method of forming a resist pattern, comprising:
applying a resist composition to a substrate to form a resist film on the substrate, the resist composition exhibiting E0KrF greater E0EUV, wherein E0KrF is a sensitivity to KrF light of 248 nm, and E0EUV is a sensitivity to EUV light; conducting EUV exposure of the resist film; and developing the resist film to form a resist pattern.