| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD OF OPERATING THE SAME |
| 摘要 |
A semiconductor memory device and a method of operating the same are disclosed. The semiconductor memory device includes a memory cell array including memory blocks, a voltage generator configured to generate a precharge voltage; and a read and write circuit coupled to the memory blocks through bit lines, and configured to supply the precharge voltage to the bit lines when a selected memory block is accessed. Here, the precharge voltage varies depending on a distance between the read and write circuit and the selected memory block. |
| 申请公布号 |
US2014160846(A1) |
申请公布日期 |
2014.06.12 |
| 申请号 |
US201313803788 |
申请日期 |
2013.03.14 |
| 申请人 |
SK HYNIX INC. |
发明人 |
LEE Jun Hyuk;LEE Eun Joung;JANG Yoon Soo;KIM Seung Won |
| 分类号 |
G11C16/26;G11C16/24 |
主分类号 |
G11C16/26 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory device comprising:
a memory cell array including memory blocks; a voltage generator configured to generate a precharge voltage; and a read and write circuit coupled to the memory blocks through bit lines, and configured to supply the precharge voltage to the bit line when a selected memory block is accessed, wherein the precharge voltage varies depending on a distance between the read and write circuit and the selected memory block.
|
| 地址 |
Icheon-si Gyeonggi-do KR |
