Programmable Resistive Device and Memory Using Diode as Selector

摘要

Building programmable resistive devices in contact holes at the crossover of a plurality of conductor lines in more than two vertical layers is disclosed. There are plurality of first conductor lines and another plurality of second conductor lines that can be substantially perpendicular to each other, though in two different vertical layers. A diode and/or a programmable resistive element can be fabricated in the contact hole between the first and second conductor lines. The programmable resistive element can be coupled to another programmable resistive device or shared between two programmable devices whose diodes conducting currents in opposite directions and/or coupled to a common conductor line. The programmable resistive memory can be configured to be programmable by applying voltages to conduct current flowing through the programmable resistive element to change its resistance for a different logic state.

主权项

1. A Programmable Resistive Device (PRD) memory, comprising:
a plurality of PRD cells, at least one of the cells comprising:
at least one PRD that including at least a diode and/or a Programmable Resistive Element (PRE) being fabricated in a contact hole at the crossovers of a plurality of the first and a plurality of second conductor lines located in more than two vertical layers;the PRE coupled to a first conductor line;the diode including at least a first active region and a second active region isolated from the first active region, where the first active region having a first type of dopant and a second active region having a second type of dopant, the first active region providing a first terminal of the diode, the second active region providing a second terminal of the diode, the first active region coupled to the PRE and the second active region coupled to a second conductor line, at least one PRE of one PRD being coupled to another PRD or shared between two PRDs whose diode being coupled to the second or a third conductor line; and wherein the PRE is configured to be programmable by applying voltages to the first, the second conductor lines and/or the third conductor line to thereby change its resistance for a different logic state.