III-Nitride Device Having an Enhanced Field Plate

摘要

In an exemplary implementation, a semiconductor device includes a III-nitride heterojunction including a III-nitride barrier layer situated over a III-nitride channel layer to form a conduction channel including a two-dimensional electron gas. The semiconductor device further includes a gate electrode coupled to a field plate. The field plate includes a plurality of steps insulated from the conduction channel by a dielectric body and the III-nitride barrier layer. The dielectric body under each one of the plurality of steps contributes to a breakdown voltage that is at least twice a breakdown voltage of the semiconductor device at each corresponding step. The breakdown voltage can correspond to a breakdown voltage of the dielectric body and the III-nitride barrier layer.

主权项

1. A semiconductor device comprising:
a III-nitride heterojunction including a III-nitride barrier layer situated over a III-nitride channel layer to form a conduction channel comprising a two-dimensional electron gas; a gate electrode coupled to a field plate, said field plate comprising a plurality of steps insulated from said conduction channel by a dielectric body and said III-nitride barrier layer; wherein said dielectric body under each one of said plurality of steps has a breakdown voltage which is at least twice a breakdown voltage of said semicondcutor device at each corresponding step.