| 发明名称 |
PHASE CHANGE MEMORY CELLS WITH SURFACTANT LAYERS |
| 摘要 |
An example embodiment is a phase change memory cell including a bottom electrode and phase change material carried within a via above the bottom electrode. A surfactant layer is deposited above the bottom electrode. The surfactant layer includes a surfactant configured to lower an interfacial force between the phase change material and the via surface. |
| 申请公布号 |
US2014158971(A1) |
申请公布日期 |
2014.06.12 |
| 申请号 |
US201414180344 |
申请日期 |
2014.02.13 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Lam Chung H.;Schrott Alejandro G. |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A phase change memory cell comprising:
a bottom electrode; phase change material carried within a via above the bottom electrode; and a surfactant layer above the bottom electrode, the surfactant layer including a surfactant configured to lower an interfacial force between the phase change material and the via surface.
|
| 地址 |
Armonk NY US |
