发明名称 HIGHLY INTEGRATED MILLIMETER-WAVE SOC LAYOUT TECHNIQUES
摘要 <p>A capacitor integrated circuit can include a top metal layer, a bottom metal layer, and an intermediate metal layer. The top metal layer can store energy received from a transmission signal in an electric field. The top metal layer can include a first comb structure and a second comb structure, where the first comb structure can be interleaved with the second comb structure. The bottom metal layer can be positioned underneath the top metal layer and can provide a path to ground. The intermediate metal layer can be positioned over the bottom metal layer and underneath at least a portion of the top metal layer. The intermediate metal layer can provide a signal path for a supply voltage.</p>
申请公布号 WO2014089521(A1) 申请公布日期 2014.06.12
申请号 WO2013US73726 申请日期 2013.12.06
申请人 ANAYAS360.COM, LLC 发明人 LASKAR, JOY
分类号 H01L21/82;H01L21/822;H01L27/06 主分类号 H01L21/82
代理机构 代理人
主权项
地址