IGBT STRUCTURE AND MANUFACTURING METHOD THEREOF

摘要

An IGBT structure and manufacturing method thereof, the IGBT structure comprising an n-drift region (1), more than one groove gates (2), a p base region (3), a n+ emitter region (4), a shallow p base region (5), an interlayer oxide layer (6), a metal layer (7), and a p+ collector electrode region (8); at least two groove gates (2) are disposed above the n-drift region (1); the p base region (3) is located on the inner side of each groove gate (2); the shallow p base region (5) is disposed between the groove gates (2); the interlayer oxide layer (6) is located on the groove gates (2) and the shallow p base region (5); the n+ emitter region (4) is located on the two sides of each groove gate (2) respectively; the metal layer (7) is located on the interlayer oxide layer (6); and the p+ collector region (8) is on the back of the n-drift region (1). The IGBT reduces the probability of warping by widening the distance between the emitters in a groove-type IGBT, and has a low current density so as to reduce the short circuit current of the whole device, thus broadening the safe operation area of the device.