SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device with improved reliability by preventing a fuse cut by a repair process from being electrically re-connected by electrochemical migration. The semiconductor device includes a substrate, a first fuse pattern and a second fuse pattern which are formed on the substrate and are separated from each other with a first width, a first insulating layer which is formed on the first fuse pattern and the second fuse pattern and includes an opening part which has a second width which is smaller than the first width.