SEMICONDUCTOR DEVICE MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide an art to inhibit roughening of a wafer surface caused by Si atom desorption from a surface of a silicon carbide wafer in a heat treatment process of a semiconductor device and increase production efficiency of the semiconductor device.SOLUTION: A semiconductor device manufacturing method disclosed in the present embodiment comprises an arrangement process and a heat treatment process. In the arrangement process, a plurality of silicon carbide wafers 10 each including a first surface 16 and a second surface 18 which is a rear face of the first surface in a manner such that the centers of the silicon carbide wafers 10 are coaxially located and the first surface 16 and the second surface 18 of the adjacent silicon carbide wafers are opposite to each other and separated in parallel with each other. In the heat treatment process, the plurality of silicon carbide wafers 10 arranged in the arrangement process are heated in a manner such that a temperature of the first surface 16 of each silicon carbide wafer becomes higher than that of the second surface 18 and a temperature of the second surface 18 of one silicon carbide wafer 10 between the adjacent silicon carbide wafers 10 becomes higher than that of the first surface 16 of the other silicon carbide wafer which is opposite to the second surface 18.