NOBLE METAL / NON-NOBLE METAL ELECTRODE FOR RRAM APPLICATIONS

摘要

A method for forming a non-volatile memory device includes disposing a junction layer comprising a doped silicon-bearing material in electrical contact with a first conductive material, forming a switching layer comprising an undoped amorphous silicon-bearing material upon at least a portion of the junction layer, disposing a layer comprising a non-noble metal material upon at least a portion of the switching layer, disposing an active metal layer comprising a noble metal material upon at least a portion of the layer, and forming a second conductive material in electrical contact with the active metal layer.

主权项

1. A method for forming a non-volatile memory device comprises:
disposing a junction layer comprising a doped silicon-bearing material in electrical contact with a first conductive material; forming a switching layer comprising an undoped amorphous silicon-bearing material upon at least a portion of the junction layer; disposing a layer comprising a non-noble metal material upon at least a portion of the switching layer; disposing an active metal layer comprising a noble metal material upon at least a portion of the layer; and forming a second conductive material in electrical contact with the active metal layer.