发明名称 POLYCRYSTALLINE DIAMOND COMPACTS
摘要 In an embodiment, a polycrystalline diamond compact includes a substrate, and a polycrystalline diamond (“PCD”) table bonded to the substrate and including an exterior working surface, at least one lateral surface, and a chamfer extending between the exterior working surface and the at least one lateral surface. The PCD table includes bonded diamond grains defining interstitial regions. The PCD table includes a first region adjacent to the substrate and a second leached region adjacent to the first region and extending inwardly from the exterior working surface to a selected depth. At least a portion of the interstitial regions of the first region include an infiltrant disposed therein. The interstitial regions of the second leached region are substantially free of metal-solvent catalyst. The second region is defined by the exterior working surface, the lateral surface, the chamfer, and a generally horizontal boundary located below the chamfer.
申请公布号 US2014158437(A1) 申请公布日期 2014.06.12
申请号 US201414178118 申请日期 2014.02.11
申请人 US SYNTHETIC CORPORATION 发明人 Mukhopadhyay Debkumar;Bertagnolli Kenneth E.;Gonzalez Jair J.
分类号 E21B10/573;E21B10/55;B24D3/10 主分类号 E21B10/573
代理机构 代理人
主权项 1. A polycrystalline diamond compact, comprising: a substrate; and a polycrystalline diamond table bonded to the substrate and including an exterior working surface, at least one lateral surface, and a chamfer extending between the exterior working surface and the at least one lateral surface, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, the polycrystalline diamond table further including: a first region adjacent to the substrate, at least a portion of the interstitial regions of the first region including an infiltrant disposed therein; anda second leached region adjacent to the first region and extending inwardly from the exterior working surface to a selected depth, the interstitial regions of the second leached region being substantially free of metal-solvent catalyst, the second region being defined by the exterior working surface, the at least one lateral surface, the chamfer, and a generally horizontal boundary located below the chamfer.
地址 Orem UT US