发明名称 |
POLYCRYSTALLINE DIAMOND COMPACTS |
摘要 |
In an embodiment, a polycrystalline diamond compact includes a substrate, and a polycrystalline diamond (“PCD”) table bonded to the substrate and including an exterior working surface, at least one lateral surface, and a chamfer extending between the exterior working surface and the at least one lateral surface. The PCD table includes bonded diamond grains defining interstitial regions. The PCD table includes a first region adjacent to the substrate and a second leached region adjacent to the first region and extending inwardly from the exterior working surface to a selected depth. At least a portion of the interstitial regions of the first region include an infiltrant disposed therein. The interstitial regions of the second leached region are substantially free of metal-solvent catalyst. The second region is defined by the exterior working surface, the lateral surface, the chamfer, and a generally horizontal boundary located below the chamfer. |
申请公布号 |
US2014158437(A1) |
申请公布日期 |
2014.06.12 |
申请号 |
US201414178118 |
申请日期 |
2014.02.11 |
申请人 |
US SYNTHETIC CORPORATION |
发明人 |
Mukhopadhyay Debkumar;Bertagnolli Kenneth E.;Gonzalez Jair J. |
分类号 |
E21B10/573;E21B10/55;B24D3/10 |
主分类号 |
E21B10/573 |
代理机构 |
|
代理人 |
|
主权项 |
1. A polycrystalline diamond compact, comprising:
a substrate; and a polycrystalline diamond table bonded to the substrate and including an exterior working surface, at least one lateral surface, and a chamfer extending between the exterior working surface and the at least one lateral surface, the polycrystalline diamond table including a plurality of bonded diamond grains defining a plurality of interstitial regions, the polycrystalline diamond table further including:
a first region adjacent to the substrate, at least a portion of the interstitial regions of the first region including an infiltrant disposed therein; anda second leached region adjacent to the first region and extending inwardly from the exterior working surface to a selected depth, the interstitial regions of the second leached region being substantially free of metal-solvent catalyst, the second region being defined by the exterior working surface, the at least one lateral surface, the chamfer, and a generally horizontal boundary located below the chamfer.
|
地址 |
Orem UT US |