SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD THEREOF

摘要

A semiconductor light emitting device includes a first conductivity-type semiconductor layer, an active layer, a second conductivity-type semiconductor layer, an insulating region formed along the outer edges of an upper surface of the second conductivity-type semiconductor layer, and an ohmic-electrode layer disposed on the second conductivity-type semiconductor layer.

主权项

1. A semiconductor light emitting device comprising:
a first conductivity-type semiconductor layer; an active layer disposed on the first conductivity-type semiconductor layer; a second conductivity-type semiconductor layer disposed on the active layer; an insulating region disposed along outer edges of an upper surface of the second conductivity-type semiconductor layer, wherein the insulating region is divided into a plurality of separated insulating regions; an ohmic-electrode layer disposed on the second conductivity-type semiconductor layer above the plurality of separated insulating regions; a first electrode disposed on a portion of the first conductivity-type semiconductor layer; and a second electrode disposed on a portion of the ohmic-electrode layer.