THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE COMPRISING THE SAME

摘要

A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises an oxide semiconductor layer, a gate electrode, a source electrode and a drain electrode formed on a substrate in a coplanar configuration. A first conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the source electrode. A second conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the drain electrode. The first conductive member and the second conductive member are arranged to decrease resistance between a channel region of the oxide semiconductor layer and the source and drain electrodes.

主权项

1. A thin film transistor comprising:
an oxide semiconductor layer, a gate electrode, a source electrode, and a drain electrode formed on a substrate in a coplanar configuration; a first conductive member in direct contact with the oxide semiconductor layer and in direct contact with the source electrode; and a second conductive member in direct contact with the oxide semiconductor layer and in direct contact with the drain electrode, wherein the first and the second conductive members are arranged to decrease resistance between a channel region of the oxide semiconductor layer and the source and drain electrodes.