| 摘要 |
A semiconductor memory device includes: an input/output drive control unit which generates a drive control signal for driving a first and a second global input/output line in a first and a second test mode and an input control signal; a data input/output unit which drives the first global input/output line in response to input data upon a write operation in the first test mode, and drives the first and second global input/output lines in response to the drive control signal upon the write operation in the second test mode; and a data transmission unit which transmits data loaded on the first global input/output line to a first and a second local input/output line and stores the data in a memory cell array, upon the write operation in the first test mode, and transmits data loaded on the first and second global input/output lines to the first and second local input/output lines and stores the data in the memory cell array, upon the write operation in the second test mode. |
