| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve characteristics of a semiconductor device.SOLUTION: A manufacturing method of a semiconductor device having a ridge structure part employs a manufacturing method of a semiconductor device of "forming a thick insulation film required for a high-speed modulation operation before forming the ridge structure part (mesa structure part), and subsequently forming the ridge structure part". By doing this, even when forming a thick insulation film in an underlayer of an electrode pad PD by a CVD method, the ridge structure part formed in the process subsequent to the process of forming the insulation film can avoid a stress applied to near the ridge structure part caused by being covered with the thick insulation film. As a result, deterioration in characteristics of an active layer caused by application of the stress to the ridge structure part can be effectively prevented.</p> |
