THICKENED SIDEWALL DIELECTRIC FOR MEMORY CELL

摘要

Methods and devices are disclosed, such as those involving memory cell devices with improved charge retention characteristics. In one or more embodiments, a memory cell is provided having an active area defined by sidewalls of neighboring trenches. A layer of dielectric material is blanket deposited over the memory cell, and etched to form spacers on sidewalls of the active area. Dielectric material is formed over the active area, a charge trapping structure is formed over the dielectric material over the active area, and a control gate is formed over the charge trapping structure. In some embodiments, the charge trapping structure includes nanodots. In some embodiments, the width of the spacers is between about 130% and about 170% of the thickness of the dielectric material separating the charge trapping material and an upper surface of the active area.

主权项

1. A memory device, comprising:
a semiconductor material; a recess on the semiconductor material, the recess bounded by a pair of spacers, wherein the spacers comprise a dielectric material; a first dielectric material at a first end of the recess and on the semiconductor material, wherein the first dielectric material is different than the dielectric material of the spacers; a charge trapping material on the first dielectric material; a second dielectric material on the charge trapping material; and a conductor material on the second dielectric material.