| 摘要 |
The disclosure belongs to the field of semiconductor photoreceptors, in particular to a near-infrared-visible light adjustable image sensor. By adding a transfer transistor, the disclosure integrates a silicon-based photoelectric diode and a silicon germanium-based photoelectric diode on the same chip to realize that the silicon-based photoelectric diode and a silicon germanium-based photoelectric diode are controlled by the same readout circuit at different time, thus widening the spectrum response scope of the photoreceptor, realizing high integration and multifunction of the chip and reducing the manufacturing cost of the chip. The disclosure is applicable for intermediate and high-end products with low power consumption and photoreceptors for specific wave bands, in particular to military, communicative and other special fields. |
