发明名称 |
SEMICONDUCTOR DEVICE AND OPERATING METHOD FOR THE SAME |
摘要 |
A semiconductor device and an operating method for the same are provided. The semiconductor structure comprises a first doped region, a second doped region, a third doped region, a fourth doped region and a first gate structure. The first doped region has a first type conductivity. The second doped region has a second type conductivity opposite to the first type conductivity. The first doped region is surrounded by the second doped region. The third doped region has the first type conductivity. The fourth doped region has the second type conductivity. The first gate structure is on the second doped region. The third doped region and the fourth doped region are in the second doped region and the first doped region on opposing sides of the first gate structure respectively. |
申请公布号 |
US2014159110(A1) |
申请公布日期 |
2014.06.12 |
申请号 |
US201213710505 |
申请日期 |
2012.12.11 |
申请人 |
MACRONIX INTERNATIONAL CO., LTD. |
发明人 |
Tsai Ying-Chieh;Chan Wing-Chor;Gong Jeng |
分类号 |
H01L29/739 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor structure, comprising:
a first doped region having a first type conductivity; a second doped region having a second type conductivity opposite to the first type conductivity, wherein the first doped region is surrounded by the second doped region; a third doped region having the first type conductivity; a fourth doped region having the second type conductivity; and a first gate structure on the second doped region, wherein the third doped region and the fourth doped region are in the second doped region and the first doped region on opposing sides of the first gate structure respectively.
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地址 |
Hsinchu TW |