发明名称 |
Micro-Interconnects for Light-Emitting Diodes |
摘要 |
The present disclosure provides a method of fabricating a light emitting diode (LED) package. The method includes bonding a plurality of separated light emitting diode (LED) dies to a substrate, wherein each of the plurality of separated LED dies includes an n-doped layer, a quantum well active layer, and a p-doped layer; depositing an isolation layer over the plurality of separated LED dies and the substrate; etching the isolation layer to form a plurality of via openings to expose portions of each LED die and portions of the substrate; forming electrical interconnects over the isolation layer and inside the plurality of via openings to electrically connect between one of the doped layers of each LED die and the substrate; and dicing the plurality of separated LED dies and the substrate into a plurality of LED packages. |
申请公布号 |
US2014159096(A1) |
申请公布日期 |
2014.06.12 |
申请号 |
US201414180390 |
申请日期 |
2014.02.14 |
申请人 |
TSMC Solid State Lighting Ltd. |
发明人 |
Hsia Hsing-Kuo;Yu Chih-Kuang |
分类号 |
H01L33/38;H01L33/50 |
主分类号 |
H01L33/38 |
代理机构 |
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代理人 |
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主权项 |
1. A light-emitting diode (LED) device, comprising:
a substrate having a first side and a second side opposite the first side; a conductive element extending through the substrate from the first side to the second side; an LED die disposed over the first side of the substrate; an electrically-insulating layer disposed over the LED die, the electrically-insulating layer containing an opening; and an interconnect feature disposed over the substrate and partially over the LED die, wherein a first end of the interconnect feature is electrically coupled to the LED die through the opening of the electrically-insulating layer, and a second end of the interconnect feature is electrically coupled to the conductive element, the second end being opposite the first end.
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地址 |
Hsinchu TW |