Semiconductor Light-Emitting Element and Laminate Containing Same

摘要

A semiconductor light emitting device includes a film of a nitride of a group 13 element grown on a seed crystal substrate by flux method from a melt including a flux and a group 13 element under nitrogen containing atmosphere, an n-type semiconductor layer provided on the film of the nitride, a light emitting region provided on the n-type semiconductor layer, and a p-type semiconductor layer provided on the light emitting region. The film includes an inclusion distributed layer in a region distant by 50 μm or less from an interface of the film on the side of the seed crystal substrate and including inclusions derived from components of the melt, and an inclusion depleted layer with the inclusion depleted formed on the inclusion distributed layer.

主权项

1. A semiconductor light emitting device comprising a film of a nitride of a group 13 element grown on a seed crystal substrate by flux method from a melt comprising a flux and a group 13 element under nitrogen containing atmosphere, an n-type semiconductor layer provided on said film of said nitride of said group 13 element, a light emitting region provided on said n-type semiconductor layer, and a p-type semiconductor layer provided on said light emitting region;
wherein said film comprises an inclusion distributed layer in a region distant by 50 μm or less from an interface of said film of said nitride of said group 13 element on the side of said seed crystal substrate and including inclusions derived from components of said melt, and an inclusion depleted layer with said inclusion depleted formed on said inclusion distributed layer.