| 摘要 |
Disclosed are a method and an apparatus for forming a bond pad of a semiconductor device such as a back-side illuminated (BSI) image sensor device. A substrate of the device includes an opening portion at a back side thereof, and the opening portion may reach a first metal layer formed at a front surface of the device. A buffer layer may be formed at the back side of the substrate to cover a sidewall of the opening potion of the substrate. A pad metal layer is formed on the buffer layer to make contact with a first metal layer formed at the bottom of the opening portion of the substrate. The bond pad may be formed to make contact with the pad metal layer. The bond pad may be vertically connected to the pad metal layer on the substrate. Further, the bond pad may be connected to the first metal layer of the device at the opening portion of the substrate. |
