III-V Compound Semiconductor Epitaxy From a Non-III-V Substrate

摘要

A structure comprises a substrate, a mask, a buffer/nucleation layer, and a group III-V compound semiconductor material. The substrate has a top surface and has a recess from the top surface. The recess includes a sidewall. The first mask is the top surface of the substrate. The buffer/nucleation layer is along the sidewall, and has a different material composition than a material composition of the sidewall. The III-V compound semiconductor material continuously extends from inside the recess on the buffer/nucleation layer to over the first mask.

主权项

1. A structure comprising:
a substrate having a top surface, the substrate having recesses from the top surface; a first mask over the top surface, the first mask comprising a first dielectric material; second mask portions along bottom surfaces of the recesses, the second mask portions comprising a second dielectric material; and a group-III group-V (III-V) compound semiconductor material in the recesses and extending over the top surface of the substrate, the III-V compound semiconductor material forming a continuous layer over the top surface, the III-V compound semiconductor material being a different material than a material of the substrate in sidewalls of the recesses.