发明名称 |
NAND FLASH MEMORY WITH VERTICAL CELL STACK STRUCTURE AND METHOD FOR MANUFACTURING SAME |
摘要 |
<p>Disclosed is a method of manufacturing flash memory with a vertical cell stack structure. The method includes forming source lines in a cell area of a substrate having an ion-implanted well and forming an alignment mark relative to the source lines. The alignment mark is formed in the substrate outside the cell area of the substrate. After formation of the source lines, cell stacking layers are formed. After forming the cell stacking layers, cell pillars in the cell stacking layers are formed at locations relative to the previously formed source lines using the alignment mark to correctly locate the cell pillars.</p> |
申请公布号 |
WO2014085904(A1) |
申请公布日期 |
2014.06.12 |
申请号 |
WO2013CA00997 |
申请日期 |
2013.11.29 |
申请人 |
MOSAID TECHNOLOGIES INCORPORATED |
发明人 |
RHIE, HYOUNG, SEUB |
分类号 |
G11C16/00;H01L21/308;H01L21/71;H01L21/762 |
主分类号 |
G11C16/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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