| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor quantum dot, and a single photon generator and a method of manufacturing the same, capable of achieving both high light-emitting efficiency and position controllability of a semiconductor quantum dot.SOLUTION: In a rectangular recessed part formed on a surface of a semiconductor substrate having a (100) plane as a principal surface, a lower clad layer having a recess consisting of an inclined plane whose angle made with the (100) plane is gentler than 54.7° is formed. A quantum dot layer is formed in this recess. |
