ARRAY-TYPE LIGHT RECEIVING ELEMENT AND METHOD FOR MANUFACTURING ARRAY-TYPE LIGHT RECEIVING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide an array-type light receiving element capable of improving a yield by suppressing an increase in dark current.SOLUTION: An array-type light receiving element 10 comprises a group III-V compound semiconductor substrate 12 of a first conductivity type. A light-receiving layer 14 is provided on the group III-V compound semiconductor substrate. A semiconductor region 16 composed of a group III-V compound semiconductor is provided on the light-receiving layer. The semiconductor region includes an impurity of a first conductivity type. A plurality of regions 24 of a second conductivity type are formed so that they include a boundary inside the light-receiving layer by selectively diffusing an impurity of a second conductivity type from a surface of the semiconductor region. The semiconductor region includes a first region R1 extending from the surface of the semiconductor region to the middle of the semiconductor region and a second region R2 extending between the first region and the light-receiving layer. Concentration of the impurity of the first conductivity type in the first region is higher than concentration of the impurity of the first conductivity type in the second region so as to prevent electric connection of the plurality of regions of the second conductivity type by selective diffusion.