| 发明名称 |
ERROR CORRECTED PRE-READ FOR UPPER PAGE WRITE IN A MULTI-LEVEL CELL MEMORY |
| 摘要 |
Methods, apparatuses and articles of manufacture may receive a first page of data and correct one or more errors in the first page of data to generate a page of corrected data. A program command may then be sent with a second page of data and the page of corrected data, to program a page of memory to store the second page of data. |
| 申请公布号 |
US2014164872(A1) |
申请公布日期 |
2014.06.12 |
| 申请号 |
US201213710913 |
申请日期 |
2012.12.11 |
| 申请人 |
Frickey Robert E.;Wakchaure Yogesh B.;Chao Iwen;Guo Xin;Gaewsky Kristopher H. |
发明人 |
Frickey Robert E.;Wakchaure Yogesh B.;Chao Iwen;Guo Xin;Gaewsky Kristopher H. |
| 分类号 |
G06F11/10;G11C16/10 |
主分类号 |
G06F11/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method to program an electronic memory, the method comprising:
receiving a program request to program a page of memory comprising a multi-level cell (MLC), receiving a first page of data and a second page of data associated with the program request; and programming the page of memory to store the second page of data, without reading the MLC between the receipt of the program request and programming the MLC; wherein a voltage threshold of the MLC after the programming is based, at least in part, on the first page of data.
|
| 地址 |
Sacramento CA US |
