| 发明名称 |
Light-emitting device having photon-lifetime modulation |
| 摘要 |
The invention provides a semiconductor light-emitting device having a monolithically integrated master laser, such as a distributed-Bragg-reflector (DBR) master laser, and injection-locked ring slave laser with modulated photon lifetime for optical communication beyond 100 GHz. |
| 申请公布号 |
US2014161148(A1) |
申请公布日期 |
2014.06.12 |
| 申请号 |
US201313998782 |
申请日期 |
2013.12.05 |
| 申请人 |
Osinki Marek A.;Smolyakov Gennady A. |
发明人 |
Osinki Marek A.;Smolyakov Gennady A. |
| 分类号 |
H01S5/10 |
主分类号 |
H01S5/10 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A semiconductor light-emitting device comprising a single-frequency master laser and an injection-lockable slave ring laser monolithically integrated on a substrate, wherein the ring laser is operably associated with a monolithically integrated modulator that modulates photon lifetime of the ring laser.
|
| 地址 |
Albuquerque NM US |
