Transistors, Semiconductor Devices, and electronic devices including transistor gates with conductive elements including cobalt silicide

摘要

A method for fabricating a transistor gate with a conductive element that includes cobalt silicide includes use of a sacrificial material as a place-holder between sidewall spacers of the transistor gate until after high temperature processes, such as the fabrication of raised source and drain regions, have been completed. In addition, semiconductor devices (e.g., DRAM devices and NAND flash memory devices) with transistor gates that include cobalt silicide in their conductive elements are also disclosed, as are transistors with raised source and drain regions and cobalt silicide in the transistor gates thereof. Intermediate semiconductor device structures that include transistor gates with sacrificial material or a gap between upper portions of sidewall spacers are also disclosed.

主权项

1. A semiconductor device comprising:
at least one transistor with a transistor gate comprising a conductive element including cobalt silicide; and source and drain regions proximate to the transistor gate, the source and drain regions spaced from silicide material including the cobalt silicide.