SUPER JUNCTION SEMICONDUCTOR DEVICE AND ASSOCIATED FABRICATION METHOD

摘要

A semiconductor device with a substrate, an epitaxy layer formed on the substrate, a plurality of deep wells formed in the epitaxy layer, a plurality of trench gate MOSFET units each of which is formed in top of the epitaxy layer between two adjacent deep well, wherein a trench gate of the trench gate MOSFET unit is shallower than half of the distance between two adjacent deep wells, which may reduce the product of on-state resistance and the gate charge of the semiconductor device.

主权项

1. A semiconductor device, comprising:
a substrate; an epitaxy layer, formed on the substrate, the epitaxy layer having a first conductivity type; a plurality of deep wells, formed in the epitaxy layer, wherein the deep wells have a second conductivity type; and a plurality of trench gate MOSFET units, each of the trench gate MOSFET units formed in the top portion of the epitaxy layer between two adjacent deep wells, wherein the top of the epitaxy layer serves as a body region of the trench gate MOSFET unit, and wherein the substrate serves as a drain region of the trench gate MOSFET unit; wherein each of the plurality of trench gate MOSFET units comprises a source region and a shallow trench gate that are both formed in the body region, and wherein the depth of the shallow trench gate is smaller than half of the distance between the two adjacent deep wells.