FINFET AND MANUFACTURING METHOD THEREOF

摘要

Provided are a FinFET (100) and manufacturing method thereof, the FinFET (100) manufacturing method comprising: forming a semiconductor fin (103) having a trapezoidal cross section; forming either a source region or a drain region; forming a sacrificial side-wall (107); using the sacrificial side-wall (107) as a mask to form the other one of the source region and drain region; removing the sacrificial side-wall (107); and replacing the sacrificial side-wall (107) with a gate stack, the gate stack comprising a gate conductor (109) and a gate dielectric (108), and the gate dielectric (108) separating the gate conductor (109) from the semiconductor fin (103).