| 摘要 |
<p>A single crystal silicon wafer (11) bonding surface having a thin film substrate (13) bonded thereto has a rough surface (11a), which is difficult to be bonded to, and a peripheral portion (11b) of the rough surface. This semiconductor device manufacturing method has: a step for bonding a thermally-oxidized film (22) to the thin film substrate (13) surface on the reverse side of the bonding surface, said thermally-oxidized film being on a surface of a single crystal silicon wafer (21); and a step for cutting a thin film substrate (13) portion in a region facing the rough surface (11a). Consequently, the semiconductor device is obtained by suppressing breakage of the substrate bonded to the semiconductor substrate.</p> |
