| 摘要 |
<p>A method of producing vertical nanowires using single catalyst material is provided, the method includes the steps of depositing an insulating oxide or nitride layer (101) on a substrate surface, depositing a gold catalyst layer (103) on top of the insulating oxide or nitride layer (101), annealing the substrate with the gold catalyst layer at temperature above 350°C, such that nanoparticles are formed of a diameter in the range of 1 to 100 nm, growing zinc oxide nanowires from the exposed gold catalyst nanoparticles by chemical vapour deposition (CVD) with diethylzinc as a precursor, and growing silicon nanowires from the remaining gold catalyst nanoparticles with silicon as precursor, such that vertical type zinc oxide nanowires are produced and laterally connected by silicon nanowires wherein the insulating oxide or nitride layer (101) is not required when the substrate is an insulative material.</p> |
