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1. A method for manufacturing a semiconductor device, the method comprising:
providing a substrate and a back electrode disposed between the substrate and an active semiconductor layer, the back electrode having a reflective layer that is reflective to at least one wavelength of light, the reflective layer comprising an undulating reflective surface having an undulating profile that includes peaks that protrude away from the substrate and valleys that extend into the reflective layer toward the substrate; depositing a filler layer onto the reflective layer of the back electrode such that the active semiconductor layer can be subsequently deposited onto the filler layer, the filler layer at least partially filling one or more of the valleys of the undulating profile of the reflective surface, the filler layer being transmissive to the at least one wavelength of light such that the at least one wavelength of light can pass through the filler layer to the reflective layer of the back electrode; and depositing the active semiconductor layer onto the filler layer such that the filler layer and the back electrode are disposed between the substrate and the active semiconductor layer, wherein the filler layer is positioned such that at least a portion of incident light passes through the active semiconductor layer into the filler layer, passes through the filler layer, is reflected by the reflective layer of the back electrode, and passes back through the filler layer to be absorbed by the active semiconductor layer.
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