发明名称 |
BULK FINFET WITH SUPER STEEP RETROGRADE WELL |
摘要 |
A method for forming a fin transistor in a bulk substrate includes forming a super steep retrograde well (SSRW) on a bulk substrate. The well includes a doped portion of a first conductivity type dopant formed below an undoped layer. A fin material is grown over the undoped layer. A fin structure is formed from the fin material, and the fin material is undoped or doped. Source and drain regions are provided adjacent to the fin structure to form a fin field effect transistor. |
申请公布号 |
US2014159162(A1) |
申请公布日期 |
2014.06.12 |
申请号 |
US201213708531 |
申请日期 |
2012.12.07 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CAI JIN;CHAN KEVIN K.;DENNARD ROBERT H.;DORIS BRUCE B.;LINDER BARRY P.;MURALIDHAR RAMACHANDRAN;SHAHIDI GHAVAM G. |
分类号 |
H01L29/78;H01L29/66 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
1. A method for forming a fin transistor with a bulk substrate, comprising:
forming a super steep retrograde well (SSRW) in or on a bulk substrate, the well including a doped portion of a first conductivity type dopant and being formed in the bulk substrate below an undoped layer, the SSRW being formed beneath a location corresponding to a fin structure, wherein forming the super steep retrograde well (SSRW) includes epitaxially growing the SSRW to include at least one diffusion barrier; growing a fin material over the undoped layer; forming the fin structure from the fin material; forming a gate structure over the fin structure; and forming source and drain regions adjacent to the fin structure to form a fin field effect transistor.
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地址 |
Armonk NY US |