| 摘要 |
A semiconductor device includes: a semiconductor substrate having a drift layer of a first conductivity type, a body layer of a second conductivity type formed on a surface of the drift layer, and a source layer formed on a portion of a surface of the body layer; a gate insulation film formed on an inner wall of a trench that extends from the surface of the semiconductor substrate through the source layer and the body layer to the drift layer; and a gate electrode housed in the trench and covered with the gate insulation film, the gate electrode including, in a region located at a drift layer side of a boundary between the body and drift layers, at least one first semiconductor layer of the first conductivity type and at least one second semiconductor layer of the second conductivity type that are alternately disposed and joined to each other. |
| 主权项 |
1. A semiconductor device comprising:
a semiconductor substrate having a drift layer of a first conductivity type, a body layer of a second conductivity type formed on a surface of the drift layer, and a source layer formed on a portion of a surface of the body layer; a gate insulation film formed on an inner wall of a trench that extends from the surface of the semiconductor substrate through the source layer and the body layer to the drift layer; and a gate electrode housed in the trench and covered with the gate insulation film, the gate electrode including, in a region located at a drift layer side of a boundary between the body layer and the drift layer, at least one first semiconductor layer of the first conductivity type and at least one second semiconductor layer of the second conductivity type that are alternately disposed and joined to each other.
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