CONTACT LANDING PADS FOR A SEMICONDUCTOR DEVICE AND METHODS OF MAKING SAME

摘要

One device herein includes first and second spaced-apart active regions, a transistor formed in and above the first active region, wherein the transistor has a gate electrode, a conductive contact landing pad that is coupled to the second active region, wherein the contact landing pad is made of the same conductive material as the gate electrode, and a contact that is coupled to the contact landing pad. One method herein includes forming first and second spaced-apart active regions, forming a layer of gate insulation material on the active regions, performing an etching process to remove the gate insulation material formed on the second active region, performing a common process operation to form a gate electrode structure above the gate insulation material on the first active region and the contact landing pad that is conductively coupled to the second active region and forming a contact to the contact landing pad.

主权项

1. A device, comprising:
first and second spaced-apart active regions formed in a semiconducting substrate; a transistor formed in and above said first active region, said transistor comprising a gate electrode made of a conductive material; a conductive contact landing pad that is conductively coupled to said second active region, wherein said conductive contact landing pad is made of the same conductive material as said gate electrode; and a contact that is conductively coupled to said conductive contact landing pad.