| 发明名称 |
PATTERNING TRANSITION METALS IN INTEGRATED CIRCUITS |
| 摘要 |
An integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the semiconductor devices, wherein the conductive lines include a transition metal and a protective cap deposited on the transition metal. Alternatively, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the semiconductor devices and having sub-eighty nanometer pitches, wherein the conductive lines include a transition metal and a protective cap deposited on the transition metal, wherein the protective cap has a thickness between approximately five and fifteen nanometers. Alternatively, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the semiconductor devices and having sub-eighty nanometer line widths, wherein the conductive lines include a transition metal and a protective cap deposited on the transition metal, wherein the protective cap has a thickness between approximately five and fifteen nanometers. |
| 申请公布号 |
US2014159242(A1) |
申请公布日期 |
2014.06.12 |
| 申请号 |
US201313734524 |
申请日期 |
2013.01.04 |
| 申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
Cabral, JR. Cyril;Engelmann Sebastian U.;Fletcher Benjamin L.;Gordon Michael S.;Joseph Eric A. |
| 分类号 |
H01L29/45 |
主分类号 |
H01L29/45 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An integrated circuit, comprising:
a plurality of semiconductor devices; and a plurality of conductive lines connecting the plurality of semiconductor devices, wherein at least some of the plurality of conductive lines comprise:
a layer of a transition metal; anda protective cap deposited on the layer of the transition metal.
|
| 地址 |
Armonk NY US |
