| 摘要 |
The present disclosure relates to a semiconductor light-emitting diode including: a plurality of semiconductor layers; a first inclined surface that has a first incline in the plurality of semiconductor layers so as to connect the surfaces of the first semiconductor layer and the second semiconductor layer, which are exposed through etching, and reflect light from an active layer to the first semiconductor layer side; a second inclined surface that has a second incline, which is greater than the first incline, on the circumference of the plurality of semiconductor layers so as to reflect the light from the active layer to the first semiconductor layer side; and a non-conductive reflection film that is formed on the second semiconductor layer so as to reflect the light from the active layer to the first semiconductor layer side. |
