| 摘要 |
<p>The present invention provides a method for producing a Group III nitride semiconductor light emitting device wherein a light emitting layer is formed by the formation of a well layer, a capping layer, and a barrier layer, and the well layer having superior flatness and crystallinity is obtained while suppressing the occurrence of damage to the well layer. In the formation of the light emitting layer, pits are provided in the light emitting layer so that a pit diameter (D) falls within a range of 120 to 250 nm. The light emitting layer formation step comprises the steps of forming the barrier layer, forming the well layer, and forming the capping layer. The growth temperature of the barrier layer is higher than that of the well layer by a certain temperature of 65-135°C.</p> |
