| 摘要 |
PROBLEM TO BE SOLVED: To provide a production method of an SiC substrate capable of producing, in improved yield, the SiC substrate having low dislocation density with suppressed occurrence of a stacking fault.SOLUTION: Provided is a production method of an SiC substrate 10 having an off-angle and having a main surface formed thereon. The production method of the SiC substrate includes steps of: preparing a seed substrate having an off-angle to the {0001}plane; growing an SiC crystal on the seed substrate; and cutting out the SiC substrate 10 from the SiC crystal so that an angle formed between a direction of a dislocation line 12 of basal surface dislocation and the off-direction D becomes 75° or larger and 105° or smaller. The off-angle of the seed substrate is 10° or smaller. |
