| 发明名称 |
SEMICONDUCTOR RESISTOR STRUCTURE AND SEMICONDUCTOR PHOTOMULTIPLIER DEVICE |
| 摘要 |
According to embodiments of the present invention, a semiconductor resistor structure is provided. The semiconductor resistor structure includes a substrate, a first region of a first conductivity type in the substrate, a second region of the first conductivity type in the substrate, the first region and the second region arranged one over the other, and an intermediate region of a second conductivity type in between the first region and the second region, wherein at least one gap is defined through the intermediate region and overlapping with the first region and the second region. According to further embodiments of the present invention, a semiconductor photomultiplier device is also provided. |
| 申请公布号 |
US2014159180(A1) |
申请公布日期 |
2014.06.12 |
| 申请号 |
US201314099782 |
申请日期 |
2013.12.06 |
| 申请人 |
Agency for Science, Technology and Research |
发明人 |
Sun Fei;Duan Ning;Lo Patrick Guo-Qiang |
| 分类号 |
H01L29/8605;H01L31/10 |
主分类号 |
H01L29/8605 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor resistor structure comprising:
a substrate; a first region of a first conductivity type in the substrate; a second region of the first conductivity type in the substrate, the first region and the second region arranged one over the other; and an intermediate region of a second conductivity type in between the first region and the second region, wherein at least one gap is defined through the intermediate region and overlapping with the first region and the second region.
|
| 地址 |
Singapore SE |
