| 发明名称 |
POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
There is provided a power semiconductor device, including: a first conductive type drift layer, a second conductive type termination layer formed on an upper portion of an edge of the drift layer, and a high concentration first conductive type channel stop layer formed on a side surface of the edge of the drift layer. |
| 申请公布号 |
US2014159106(A1) |
申请公布日期 |
2014.06.12 |
| 申请号 |
US201313874038 |
申请日期 |
2013.04.30 |
| 申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
UM Kee Ju;Seo Dong Soo;Jang Chang Su;Song In Hyuk;Park Jaehoon |
| 分类号 |
H01L29/739;H01L29/66 |
主分类号 |
H01L29/739 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A power semiconductor device, comprising:
a first conductive type drift layer; a second conductive type termination layer formed on an upper portion of an edge of the drift layer; and a high concentration first conductive type channel stop layer formed on a side surface of the edge of the drift layer.
|
| 地址 |
Suwon KR |
