| 发明名称 |
POWER SEMICONDUCTOR DEVICE |
| 摘要 |
Disclosed herein is a power semiconductor device, including: a drift layer formed on the first surface of the semiconductor substrate, a well layer of a first conductive type, formed on the drift layer, a trench formed to reach the drift layer through the well layer, a first electrode formed in the trench, a second conductive type of second electrode region formed on the well layer, including a first region contacting the trench in a perpendicular direction and a second region spaced apart from the trench in a parallel direction and being perpendicular to the first region, a first conductive type of second electrode region formed to contact a side surface of the second conductive type of second electrode region, and a second electrode formed on the well layer and electrically connected to the second conductive type of second electrode region and the first conductive type of second electrode region. |
| 申请公布号 |
US2014159105(A1) |
申请公布日期 |
2014.06.12 |
| 申请号 |
US201313831780 |
申请日期 |
2013.03.15 |
| 申请人 |
SAMSUNG ELECTRO-MECHANICS CO., LTD. |
发明人 |
Um Kee Ju;Song In Hyuk;Jang Chang Su;Park Jae Hoon;Seo Dong Soo |
| 分类号 |
H01L29/739 |
主分类号 |
H01L29/739 |
| 代理机构 |
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代理人 |
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| 主权项 |
1. A power semiconductor device comprising:
a semiconductor substrate of a first conductive type, having a first surface and a second surface; a drift layer of a second conductive type, formed on the first surface of the semiconductor substrate; a well layer of a first conductive type, formed on the drift layer; a trench formed to reach the drift layer through the well layer in a thickness direction; a first electrode formed in the trench; a second conductive type of a second electrode region selectively formed on the well layer, including a first region contacting the trench in a perpendicular direction and a second region spaced apart from the trench in a parallel direction and being perpendicular to the first region, and having a higher concentration than the drift layer; a first conductive type of a second electrode region formed on the well layer so as to contact a side surface of the second conductive type of second electrode region and having a higher concentration than the well layer; and a second electrode formed on the well layer and electrically connected to the second conductive type of second electrode region and the first conductive type of second electrode region.
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| 地址 |
Suwon KR |
