发明名称 |
ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, DISPLAY DEVICE |
摘要 |
Embodiments of the invention disclose an array substrate and a fabrication method thereof, and a display device. The array substrate comprises a plurality of pixel units disposed on a base substrate, and the pixel unit comprises a thin-film transistor structure region and a display region other than the thin-film transistor structure region. A thin-film transistor structure is formed in the thin-film transistor structure region, an organic light-emitting diode is formed in the display region, and the thin-film transistor structure is configured to drive the organic light-emitting diode. A light-shielding layer is formed above the thin-film transistor structure in the thin-film transistor structure region, and the light-shielding layer is configured to block a blue light from entering the thin-film transistor structure. |
申请公布号 |
US2014159016(A1) |
申请公布日期 |
2014.06.12 |
申请号 |
US201314102716 |
申请日期 |
2013.12.11 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
SONG Young Suk;YOO Seong Yeol;CHOI Seung Jin;KIM Hee Cheol |
分类号 |
H01L27/32 |
主分类号 |
H01L27/32 |
代理机构 |
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代理人 |
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主权项 |
1. An array substrate, comprising a plurality of pixel units disposed on a base substrate, the pixel unit comprising a thin-film transistor structure region and a display region other than the thin-film transistor structure region, wherein
a thin-film transistor structure is formed in the thin-film transistor structure region, an organic light-emitting diode is formed in the display region, and the thin-film transistor structure is configured to drive the organic light-emitting diode, and a light-shielding layer is formed above the thin-film transistor structure in the thin-film transistor structure region, and the light-shielding layer is configured to block a blue light from entering the thin-film transistor structure.
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地址 |
Beijing CN |