| 发明名称 |
DOUBLE GATE TYPE THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DIODE DISPLAY INCLUDING THE SAME |
| 摘要 |
A double gate type thin film transistor includes a first electrode on a substrate; a gate insulating layer on the first gate electrode; a semiconductor layer on the gate insulating layer corresponding to the first gate electrode; an etch stop layer on the semiconductor layer; source and drain electrodes contacting both sides of the semiconductor layer, respectively, and spaced apart from each other on the etch stop layer; a passivation layer on the source and drain electrode; and a second gate electrode on the passivation layer and having a double-layered structure of a transparent electrode and an opaque electrode. |
| 申请公布号 |
US2014159008(A1) |
申请公布日期 |
2014.06.12 |
| 申请号 |
US201314097743 |
申请日期 |
2013.12.05 |
| 申请人 |
LG DISPLAY CO., LTD. |
发明人 |
Jeong Woo-Cheol;Yun Sung-Jun;Son Ju-Hee |
| 分类号 |
H01L29/423;H01L29/49;H01L29/66;H01L29/786;H01L27/32 |
主分类号 |
H01L29/423 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A double gate type thin film transistor comprising:
a first electrode on a substrate; a gate insulating layer on the first gate electrode; a semiconductor layer on the gate insulating layer corresponding to the first gate electrode; an etch stop layer on the semiconductor layer; source and drain electrodes contacting both sides of the semiconductor layer, respectively, and spaced apart from each other on the etch stop layer; a passivation layer on the source and drain electrode; and a second gate electrode on the passivation layer and having a double-layered structure of a transparent electrode and an opaque electrode.
|
| 地址 |
Seoul KR |
