| 发明名称 |
RESISTANCE-SWITCHING MEMORY CELLS ADAPTED FOR USE AT LOW VOLTAGE |
| 摘要 |
A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer has a thickness between 20 and 65 angstroms. Other aspects are also provided. |
| 申请公布号 |
US2014158974(A1) |
申请公布日期 |
2014.06.12 |
| 申请号 |
US201414180818 |
申请日期 |
2014.02.14 |
| 申请人 |
SanDisk 3D LLC |
发明人 |
Yang Xiaoyu;Scheuerlein Roy E.;Li Feng;Meeks Albert T. |
| 分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A memory cell comprising:
a diode; and a resistance-switching material layer coupled in series with the diode, wherein the resistance-switching material layer has a thickness between 20 and 65 angstroms.
|
| 地址 |
Milpitas CA US |
